Mosfet Application

Our MOSFET product line provides efficient switching solutions for various application scenarios, from power management to motor drive. The low on resistance (RDS (on)) design ensures lower power consumption, and advanced packaging technology provides excellent heat dissipation performance, meeting the stringent requirements of portable devices, industrial control, and other fields.

Mosfet Application
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Energy storage system BMS protection: LFPAK's short-circuit withstand capability
Mosfet Application

Energy storage system BMS protection: LFPAK's short-circuit withstand capability

IMWTEK UK1R1N06LFH and Infineon BSC060N10NS engage in a showdown in the energy storage BMS short-circuit protection scenario. Tests have shown that IMWTEK's MOSFET outperforms Infineon's solution in terms of short-circuit withstand time (12ms vs. 8ms), turn off performance (1.5 μ s delay/80V spike), and high-temperature stability (junction temperature of 210 ° C without failure), with a cost reduction of 15%. Its LFPAK package meets UL 1741 certification through double-sided heat dissipation and optimized driver circuit, and has been applied to high-voltage energy storage systems such as CATL

2025-03-25 Learn More →
Electric vehicle OBC (on-board charger): TOLL package parallel design
Mosfet Application

Electric vehicle OBC (on-board charger): TOLL package parallel design

The on-board charger (OBC) for electric vehicles needs to efficiently convert AC power to high-voltage DC power, and the synchronous rectification MOSFET in LLC resonant topology faces challenges such as high frequency, multi chip current sharing, and vehicle compliance reliability. TOLL packaging is an ideal choice due to its low parasitic inductance. Comparative testing shows that IMWTEK's UP006N08CT outperforms Infineon's solution in terms of efficiency (peak value 96.8%), current sharing performance (current imbalance<4%), and EMC performance, and has lower costs. Its TOLL packaging design

2025-03-25 Learn More →
Industrial robot joint drive: a high reliability solution packaged in DFN
Mosfet Application

Industrial robot joint drive: a high reliability solution packaged in DFN

IMWTEK UD009N06GH and Infineon IAUC50N04S7N014 MOSFET compete in performance in industrial robot joint drive scenarios. Both DFN 5 × 6mm packaged devices are designed for high vibration (20G), high temperature (85 ° C), and long lifespan (10000 hours) requirements. Tests have shown that IMWTEK has advantages in terms of 50V voltage, 3.5m Ω on resistance, and 42 ° C/W thermal resistance parameters. Its copper clip structure reduces the continuous operating junction temperature to 78 ° C (Infineon 89 ° C), with an efficiency of 95.2%. In the anti vibration test, the shear force of the IMWTEK sol

2025-03-13 Learn More →
Solar MPPT controller: Double sided heat dissipation design in STOLL package
Mosfet Application

Solar MPPT controller: Double sided heat dissipation design in STOLL package

IMWTEK US022N10ST and Infineon CoolMOS ™ C7 engages in a showdown in high-temperature scenarios with photovoltaic MPPT controllers. The US022N10ST adopts a double-sided heat dissipation STOLL package. Compared with the Infineon TO-247-4 single-sided heat dissipation, its RDS (on) is as low as 8m Ω (90% lower than 80m Ω), avalanche energy is 350mJ (25% higher), and thermal resistance is 15 ° C/W (junction temperature is 14 ° C lower than Infineon). Actual testing shows that the MPPT efficiency reaches 99.1% (Infineon 97.5%) at 85 ° C, with parameter drift<2% (competitor 5%) after continuous av

2025-03-13 Learn More →
Unmanned electromechanical tuning system: the lightweight revolution of QFN packaged MOSFET
Mosfet Application

Unmanned electromechanical tuning system: the lightweight revolution of QFN packaged MOSFET

IMWTEK UD1206QM and Toshiba SSM6K513 MOSFET engage in a performance showdown in the dynamic scenario of unmanned aerial vehicle tuning. UD1206QM adopts QFN 3 × 3mm packaging. Compared with Toshiba WSON solution, its RDS (on) is reduced to 1.2m Ω, Qg is reduced by 18%, and pulse current reaches 300A (increased by 20%). Actual testing shows that the transient response time of UD1206QM has been shortened to 1.2 μ s, the junction temperature is 14 ° C lower than Toshiba, and there is zero failure of solder joints after vibration, resulting in a 1.5% increase in system efficiency. The bottom pad h

2025-03-13 Learn More →
Server Power Redundancy Design: High Density Layout of LFPAK
Mosfet Application

Server Power Redundancy Design: High Density Layout of LFPAK

IMWTEK UK1R5N08LF outperforms Infineon OptiMOS in 48V to 12V DC-DC conversion ™ 5 BSC080N10NS has better performance. The LFPAK package achieves 13% conduction loss optimization and 15% driving efficiency improvement through a 0.85m Ω on resistance, 45nC gate charge, and 1.2 ° C/W ultra-low thermal resistance. Tested at 750kHz high frequency, the peak efficiency reaches 98.4% (0.6% higher than competitors), the junction temperature is 13 ° C (92 ° C) lower, and the deviation of 4-channel parallel current is less than 3%. Reverse recovery loss reduced by 28% and passed 2000 hours of high-tempe

2025-03-12 Learn More →
Automotive LED Lighting: TOLL Package Low Thermal Resistance Solution
Mosfet Application

Automotive LED Lighting: TOLL Package Low Thermal Resistance Solution

IMWTEK UP005N04CT MOSFET exhibits significant advantages over Toshiba TPH4R50AQ in matrix LED driving for automotive applications. Its TOLL packaging combined with bottom copper layer heat dissipation design reduces the thermal resistance to 38 ° C/W (16% lower than Toshiba), and the junction temperature is only 142 ° C in a 125 ° C environment, extending the lifespan of the lamp. In terms of parameters, the 4.5m Ω on resistance and 22nC gate charge achieve 13.5% conduction loss optimization and 12% driving efficiency improvement, with a dynamic response delay of 35ns and support for kHz level

2025-03-12 Learn More →
Electric tool motor drive: explosive power of TOLT packaged MOSFET
Mosfet Application

Electric tool motor drive: explosive power of TOLT packaged MOSFET

The IMWTEK UP009N10LT MOSFET adopts an innovative TOLT package, which is significantly superior to the Infineon IPB030N10N in electric tool motor drive. The top heat dissipation design reduces the thermal resistance to 35 ° C/W (22% lower than competitors), combined with a 2.8m Ω on resistance and 65nC gate charge, achieving 6.7% conduction loss optimization and 7% reduction in driving power consumption. Actual testing shows that the device has a fast start-up response of 10ms (82ms), a low shell temperature of 10 ° C (68 ° C) at full load, and a system efficiency of 93.5% (an increase of 1.4%

2025-03-12 Learn More →